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NJG1119PB4 - 1 - NJG1119PB4 4 5 6 7 8 9 10 11 12 123 rfin2 rfin1 gnd rfout1 rfout2 gnd gnd gnd vin v vc tl 2 vc tl 1 extcap logic circuit 2.1ghz band 800mhz band ver.2005-08-29 w-cdma dual lna gaas mmic q general description q package outline the NJG1119PB4 is a dual band lna ic designed for w-cdma cellular phone of 2.1ghz and 800mhz band. this ic has a lna pass-through function to select high gain mode or low gain mode. an ultra small and ultra thin package of ffp12?b4 is adopted. q features o low voltage operation +2.7v o low current consumption 2.4ma typ. @2.1ghz band (high gain mode) 2.0ma typ. @800mhz band (high gain mode) 4ua typ. @800mhz / 2.1ghz band (low gain mode) o small package ffp12-b4 (package size: 2.0 x 2.0 x 0.65mm typ) [high gain mode] o high gain 14.5db typ. @frf =2140m hz 16.0db typ. @frf =885mhz o low noise figure 1.7db typ. @frf=2140mhz 1.45db typ. @frf =885mhz o high input ip3 -3.5dbm typ. @ f rf =2140.0+2140.1mhz, pin=-36dbm -3.5dbm typ. @f rf =885.0+885.1mhz, pin=-36dbm [low gain mode] o gain -4.0db typ. @f rf =2140mhz -4.5db typ. @f rf =885mhz o low noise figure 4.0db typ. @f rf =2140mhz 4.5db typ. @f rf =885mhz o high input ip3 +2.5dbm typ. @f rf =2140.0+2140.1mhz, pin=-20dbm +2.0dbm typ. @f rf =885.0+885.1mhz, pin=-20dbm q pin configuration note: specifications and description listed in this catalog are subject to change without prior notice. (top view) pin connection 1. gnd 2. vctl2 3. extcap 4. rfout1 (800mhz band) 5. gnd 6. rfout2 (2.1ghz band) 7. gnd 8. vctl1 9. vinv 10. rfin2 (2.1ghz band) 11. gnd 12. rfin1 (800mhz band)
NJG1119PB4 - 2 - q absolute maximum ratings (t a =+25c, z s =z l =50 ? ) parameters symbol conditions ratings units operating voltage v dd 5.0 v inverter supply voltage v inv 5.0 v control voltage v ctl 5.0 v input power pin v dd =2.7v +15 dbm power dissipation p d 300 mw operating temperature t opr -40~+85 c storage temperature t stg -55~+125 c q electrical characteristics 1 (dc) (v dd =v inv =2.7v, t a =+25c, z s =z l =50 ? ) parameters symbol conditions min typ max units operating voltage v dd 2.5 2.7 4.5 v inverter supply voltage v inv 2.5 2.7 4.5 v control voltage1 (high) v ctl1(h) 2.0 2.7 v inv +0.3 v control voltage1 (low) v ctl1(l) 0 0 0.8 v control voltage 2 (high) v ctl2(h) 2.0 2.7 v inv +0.3 v control voltage 2 (low) v ctl2(l) 0 0 0.8 v operating current1 800mhz[high gain mode] i dd1 v ctl1 =2.7v, v ctl2 =2.7v - 2.4 2.9 ma operating current2 2.1ghz[high gain mode] i dd2 v ctl1 =0v, v ctl2 =2.7v - 2.0 2.4 ma operating current 3 800m/2.1ghz[low gain mode] i dd3 v ctl1 =0 or 2.7v, v ctl2 =0v - 4 13 ua inverter current1 i inv1 rf off, v ctl =2.7v - 160 250 ua inverter current2 i inv2 rf off, v ctl =0v - 210 330 ua control current 1 i ctl1 v ctl1 =2.7v - 20 50 ua control current 2 i ctl2 v ctl2 =2.7v - 20 50 ua
NJG1119PB4 - 3 - q electrical characteristics 2 (2.1 ghz band high gain mode) (v dd =v inv =2.7v, v ctl1 =0v, v ctl2 =2.7v v, frf=2140mhz, t a =+25c, z s =z l =50 ? , test circuit) parameters symbol condi tions min typ max units small signal gain1 gai n1 13.0 14.5 16.0 db noise figure1 nf1 - 1.7 2.0 db pin at 1db gain compression point1 p -1db(1) -16.0 -14.0 - dbm input 3rd order intercept point iip3_1 f1=frf, f2=frf+100khz, pin=-36dbm -6.0 -3.5 - dbm rf input vswr1 vswr i 1 - 1.7 2.2 rf output vswr1 vswr o 1 - 1.9 2.5 q electrical characteristics 3 (2.1ghz band low gain mode) (v dd =v inv =2.7v, v ctl1 =v ctl2 =0v, frf=2140mhz, t a =+25c, z s =z l =50 ? , test circuit) parameters symbol condi tions min typ max units small signal gain2 gain2 -6.0 -4.0 -2.5 db noise figure2 nf2 - 4.0 6.0 db pin at 1db gain compression point2 p -1db(2) +5.0 +11.0 - dbm input 3rd order intercept point2 iip3_2 f1=frf, f2=frf+100khz, pin=-36dbm 0 +2.5 - dbm rf input vswr2 vswr i 2 - 2.0 2.5 rf output vswr2 vswr o 2 - 1.6 2.0
NJG1119PB4 - 4 - q electrical characteristics 4 (800m hz band high gain mode) ( v dd =v inv =2.7v, v ctl1 =v ctl2 =2.7v, frf=885mhz, t a =+25c, z s =z l =50 ? , test circuit) parameters symbol condi tions min typ max units small signal gain1 gai n3 14.5 16.0 17.5 db noise figure1 nf3 - 1.45 1.75 db pin at 1db gain compression point1 p -1db(3) -17.0 -15.0 - dbm input 3rd order intercept point iip3_3 f1=frf, f2=frf+100khz, pin=-36dbm -6.0 -3.5 - dbm rf input vswr1 vswr i 3 - 1.6 2.1 rf output vswr1 vswr o 3 - 1.7 2.3 q electrical characteristics 5 (800mhz band low gain mode) (v dd =v inv =2.7v, v ctl1 =2.7v, v ctl2 =0v, frf=885mhz, t a =+25c, z s =z l =50 ? , test circuit) parameters symbol condi tions min typ max units small signal gain2 gain4 -6.0 -4.0 -3.0 db noise figure2 nf4 - 4.5 6.5 db pin at 1db gain compression point2 p -1db(4) +4.0 +9.0 - dbm input 3rd order intercept point2 iip3_4 f1=frf, f2=frf+100khz, pin=-36dbm 1.5 +2.0 - dbm rf input vswr2 vswr i 4 - 1.7 2.3 rf output vswr2 vswr o 4 - 1.6 2.1
NJG1119PB4 - 5 - q terminal information no. symbol description 1 gnd ground terminal. (0v) 2 vctl2 control voltage supply terminal. the high leve l voltage of this terminal selects high gain mode. the low level voltage of this terminal selects low gain mode. 3 extcap an external bypass capacitor is r equired. (please refer to test circuit.) 4 rfout1 output terminal of 800mhz band. this terminal is also the power supply terminal of the lna, please use inductor (l3) to connect power supply. 5 gnd ground terminal. (0v) 6 rfout2 output terminal of 2.1ghz band. this terminal is also the power supply terminal of the lna, please use inductor (l7) to connect power supply. 7 gnd ground terminal. (0v) 8 vctl1 control voltage supply terminal. the high level voltage of this terminal selects 800mhz.band. the low level voltage of this terminal selects 2.1ghz band. 9 vinv inverter voltage supplies terminal. 10 rfin2 rf input terminal of 2.1ghz band. the rf signal is input through external matching circuit connected to this terminal. the dc blocking capacitor is not required. 11 gnd ground terminal. (0v) 12 rfin1 rf input terminal of 800mhz band. the rf si gnal is input through external matching circuit connected to this terminal. the dc blocking capacitor is not required. caution 1) ground terminal (no.1, 5, 7, 11) should be connected to the ground plane as low inductance as possible.
NJG1119PB4 - 6 - q electrical characteristics 1 (2.1 ghz band high gain mode) -30 -25 -20 -15 -10 -5 0 5 10 -40 -30 -20 -10 0 10 pout vs. pin pout (dbm) pin (dbm) p-1db(in)=-14.5dbm pout (f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v) 2 4 6 8 10 12 14 16 18 -40 -30 -20 -10 0 10 gain vs. pin gain (db) pin (dbm) p-1db(in)=-14.5dbm gain (f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v) 0 0.5 1 1.5 2 2.5 3 3.5 4 2 2.05 2.1 2.15 2.2 2.25 2.3 nf vs. frequency noise figure (db) frequency (ghz) nf (v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v) -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 pout, im3 vs. pin pout, im3 (dbm) pin (dbm) iip3=-3.1dbm pout im3 (f=2140+2140.1mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v) 5 6 7 8 9 10 11 12 13 -6 -5 -4 -3 -2 -1 0 1 2 2.1 2.12 2.14 2.16 2.18 2.2 oip3, iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (ghz) oip3 iip3 (df=100khz, pin=-36dbm, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v) -22 -20 -18 -16 -14 -12 -10 -8 2.1 2.12 2.14 2.16 2.18 2.2 p-1db(in) vs. frequency p-1db(in) (dbm) frequency (ghz) p-1db(in) (v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v)
NJG1119PB4 - 7 - q electrical characteristics 2 (2.1 ghz band high gain mode) 9 10 11 12 13 14 15 16 17 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 0 50 100 gain, nf vs. temperature gain (db) nf (db) temperature ( o c) (f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v) gain nf 5 6 7 8 9 10 11 12 13 -6 -5 -4 -3 -2 -1 0 1 2 -50 0 50 100 oip3, iip3 vs. temperature oip3 (dbm) iip3 (dbm) temperature ( o c) (f=2140+2140.1mhz, pin=-36dbm, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v) oip3 iip3 -22 -20 -18 -16 -14 -12 -10 -8 -6 -50 0 50 100 p-1db(in) vs. temperature p-1db(in) (dbm) temperature ( o c) p-1db(in) (f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 0 50 100 vswr vs. temperature vswri vswro vswri, vswro temperature ( o c) (f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 0 50 100 idd vs. temperature idd (ma) temperature ( o c) idd (v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v, prf=off)
NJG1119PB4 - 8 - q electrical characteristics 3(2.1g hz band high gain mode)
NJG1119PB4 - 9 - q electrical characteristics 4(2.1g hz band high gain mode) 0 5 10 15 20 0 5 10 15 20 k factor vs. frequency k factor frequency (ghz) (v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=2.7v)
NJG1119PB4 - 10 - q electrical characteristics 5(2.1ghz band low gain mode) -50 -40 -30 -20 -10 0 10 -40-30-20-10 0 10 20 pout vs. pin pout (dbm) pin (dbm) p-1db(in)=+11.0dbm pout (f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v) -12 -10 -8 -6 -4 -2 0 -40-30-20-10 0 10 20 gain vs. pin gain (db) pin (dbm) p-1db(in)=+11.0dbm gain (f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v) -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 pout, im3 vs. pin pout, im3 (dbm) pin (dbm) iip3=+2.8dbm pout im3 (f=2140+2140.1mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v) 4 6 8 10 12 14 16 18 20 2.1 2.12 2.14 2.16 2.18 2.2 p-1db(in) vs. frequency p-1db(in) (dbm) frequency (ghz) p-1db(in) (v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v) 0 1 2 3 4 5 6 7 8 2 2.05 2.1 2.15 2.2 2.25 2.3 nf vs. frequency noise figure (db) frequency (ghz) nf (v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v) -10 -8 -6 -4 -2 0 2 4 -2 0 2 4 6 8 10 12 2.1 2.12 2.14 2.16 2.18 2.2 oip3, iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (ghz) oip3 iip3 (df=100khz, pin=-20dbm, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v)
NJG1119PB4 - 11 - q electrical characteristics 6(2.1ghz band low gain mode) -11 -10 -9 -8 -7 -6 -5 -4 -3 2 3 4 5 6 7 8 9 10 -50 0 50 100 gain vs. temperature gain (db) nf (db) temperature ( o c) gain nf (f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v) -20 -15 -10 -5 0 5 10 -5 0 5 10 15 20 25 -50 0 50 100 oip3, iip3 vs. temperature oip3 (dbm) iip3 (dbm) temperature ( o c) oip3 iip3 (f=2140+2140.1mhz, pin=-20dbm, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v) 4 6 8 10 12 14 16 18 -50 0 50 100 p-1db(in) vs. temperature p-1db(in) (dbm) temperature ( o c) p-1db(in) (f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 0 50 100 vswr vs. temperature vswri vswro vswri, vswro temperature ( o c) (f=2140mhz, v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v) 0 5 10 15 20 25 30 -50 0 50 100 idd vs. temperature idd (ua) temperature ( o c) idd (v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v, prf=off)
NJG1119PB4 - 12 - q electrical characteristics 7(2.1ghz band low gain mode)
NJG1119PB4 - 13 - q electrical characteristics 8(2.1ghz band low gain mode) 0 5 10 15 20 0 5 10 15 20 k factor vs. frequency k factor frequency (ghz) (v dd =v inv =2.7v, v ctl 1=0v, v ctl 2=0v)
NJG1119PB4 - 14 - q electrical characteristics 9(800m hz band high gain mode) -25 -20 -15 -10 -5 0 5 10 -40 -30 -20 -10 0 10 pout vs. pin pout (dbm) pin (dbm) p-1db(in)=-15.0dbm pout (f=885mhz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v) 4 6 8 10 12 14 16 18 20 -40 -30 -20 -10 0 10 gain vs. pin gain (db) pin (dbm) p-1db(in)=-15.0dbm gain (f=885mhz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v) 0 0.5 1 1.5 2 2.5 3 3.5 4 0.75 0.8 0.85 0.9 0.95 1 nf vs. frequency noise figure (db) frequency (ghz) nf (v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v) -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 pout, im3 vs. pin pout, im3 (dbm) pin (dbm) iip3=-3.6dbm pout im3 (f=885+885.1mhz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v) 7 8 9 10 11 12 13 14 15 -6 -5 -4 -3 -2 -1 0 1 2 0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92 oip3, iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (ghz) oip3 iip3 (df=100khz, pin=-36dbm, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v) -22 -20 -18 -16 -14 -12 -10 -8 0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92 p-1db(in) vs. frequency p-1db(in) (dbm) frequency (ghz) p-1db(in) (v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v)
NJG1119PB4 - 15 - q electrical characteristics 10( 800mhz band high gain mode) 10 11 12 13 14 15 16 17 18 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 0 50 100 gain, nf vs. temperature gain (db) nf (db) temperature ( o c) gain nf (f=885mhz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v) 6 7 8 9 10 11 12 13 14 -6 -5 -4 -3 -2 -1 0 1 2 -50 0 50 100 oip3, iip3 vs. temperature oip3 (dbm) iip3 (dbm) temperature ( o c) oip3 iip3 (f=885+885.1mhz, pin=-36dbm, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v) -22 -20 -18 -16 -14 -12 -10 -8 -50 0 50 100 p-1db(in) vs. temperature p-1db(in) (dbm) temperature ( o c) p-1db(in) (f=885mhz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 0 50 100 vswr vs. temperature vswri vswro vswri, vswro temperature ( o c) (f=885mhz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v) 0 1 2 3 4 5 -50 0 50 100 idd vs. temperature idd (ma) temperature ( o c) idd (v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v, prf=off)
NJG1119PB4 - 16 - q electrical characteristics 11( 800mhz band high gain mode)
NJG1119PB4 - 17 - q electrical characteristics 12( 800mhz band high gain mode) 0 5 10 15 20 0 5 10 15 20 k factor vs. frequency k factor frequency (ghz) (v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=2.7v)
NJG1119PB4 - 18 - q electrical characteristics 13( 800mhz band low gain mode) -50 -40 -30 -20 -10 0 10 -40-30-20-10 0 10 20 pout vs. pin pout (dbm) pin (dbm) p-1db(in)=+9.5dbm pout (f=885mhz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v) -12 -10 -8 -6 -4 -2 0 -40-30-20-10 0 10 20 gain vs. pin gain (db) pin (dbm) p-1db(in)=+9.5dbm gain (f=885mhz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v) (f=885mhz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v) 0 1 2 3 4 5 6 7 8 0.75 0.8 0.85 0.9 0.95 1 nf vs. frequency noise figure (db) frequency (ghz) nf (v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v) -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 pout, im3 vs. pin pout, im3 (dbm) pin (dbm) iip3=+2.2dbm pout im3 (f=885mhz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v) -12 -10 -8 -6 -4 -2 0 2 -2 0 2 4 6 8 10 12 0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92 oip3, iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (ghz) oip3 iip3 (df=100khz, pin=-20dbm, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v) 4 6 8 10 12 14 16 0.85 0.86 0.87 0.88 0.89 0.9 0.91 0.92 p-1db(in) vs. frequency p-1db(in) (dbm) frequency (ghz) p-1db(in) (v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v)
NJG1119PB4 - 19 - q electrical characteristics 14( 800mhz band low gain mode) -11 -10 -9 -8 -7 -6 -5 -4 -3 3 4 5 6 7 8 9 10 11 -50 0 50 100 gain, nf vs. temperature gain (db) nf (db) temperature ( o c) gain nf (f=885m hz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v) -25 -20 -15 -10 -5 0 5 10 -10 -5 0 5 10 15 20 25 -50 0 50 100 oip3, iip3 vs. temperature oip3 (dbm) iip3 (dbm) temperature ( o c) oip3 iip3 (f=885+885.1mhz, pin=-20dbm, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v) 2 4 6 8 10 12 14 16 -50 0 50 100 p-1db(in) vs. temperature p-1db(in) (dbm) temperature ( o c) p-1db(in) (f=885m hz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 0 50 100 vswr vs. temperature vswri vswro vswri, vswro temperature ( o c) (f=885m hz, v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v) 0 5 10 15 20 25 30 -50 0 50 100 idd vs. temperature idd (ua) temperature ( o c) idd (v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v, prf=off)
NJG1119PB4 - 20 - q electrical characteristics 15( 800mhz band low gain mode)
NJG1119PB4 - 21 - q electrical characteristics 16( 800mhz band low gain mode) 0 5 10 15 20 0 5 10 15 20 k factor vs. frequency k factor frequency (ghz) (v dd =v inv =2.7v, v ctl 1=2.7v, v ctl 2=0v)
NJG1119PB4 - 22 - rf in1 (800mhz) rf in2 (2.1ghz) rf out1 (800mhz) rf out2 (2.1ghz) v ctl 2=0v or 2.7v (rx att) v inv =2.7v v dd =2.7v v ctl 1=0v or 2.7v (band select) 4 5 6 7 8 9 10 11 12 123 rfin2 rfin1 gnd rfout1 rfout2 gnd gnd gnd vin v vc tl 2 vc tl 1 extcap logic circuit 2.1ghz band 800mhz band q test circuit parts list *: please use an appropriate inductor for l2, l6, l8 to improve noise figure. q truth table ?h?=v ctl (h), ?l?=v ctl (l) parts id comment l1, l3~l5, l7 taiyo-yuden (hk1005) l2, l6, l8 murata (lqw15a) c1~c4 murata (grp15) control voltage 800mhz band 2.1ghz band v ctl 1 band select v ctl 2 rx att lna i dd bypass circuit lna i dd bypass circuit l l off on off on l h off off on off h l off on off on h h on off off off (top view) l1 10nh l2 18nh l3 18nh l4 33nh l7 1.8nh l8 6.2nh c1 6pf c2 1000pf c3 20pf c4 1000pf 1 pin index l 5 2.7nh l 6 4.3nh
NJG1119PB4 - 23 - q recommended design pcb (fr-4): t=0.2m microstrip line width=0.4mm (z 0 =50 ? ) pcb size=17.0mmx17.0mm v dd v inv v ctl 1 v ctl 2 rf in1 (800mhz) rf out1 (800mhz) rf in2 (2.1ghz) rf out2 (2.1ghz) l1 l2 l3 l4 l5 l6 l7 l8 c1 c3 c4 (top view) c2
NJG1119PB4 - 24 - q package outline (ffp12-b4) cautions on using this product this product contains gallium-arseni de (gaas) which is a harmful material. ? do not eat or put into mouth. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this product. ? t o waste this p roduct, p lease obe y the relatin g law of y ou r countr y . this product may be damaged with electric static dischar ge (esd) or spike voltage. please handle with care t o avoid these dama g es. [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. 0.750.15 0.103 0.303 0.50 0.365 0.27 2.00.1 0.30 0.20 2pin index 1pin index 0.17 0.125 0.25 (top view) (bottom view) (side view) 12pin 1pin 2.00.1 0 .3 5 unit : mm pcb : ceramic over coat : epoxy resin terminal treat : au weight : 10mg

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